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this is information on a product in full production. may 2015 docid026396 rev 2 1/16 stf12n120k5, STFW12N120K5 n-channel 1200 v, 0.62 typ., 12 a mdmesh? k5 power mosfets in to-220fp and to-3pf packages datasheet - production data figure 1. internal schematic diagram features ? industry?s lowest r ds(on) x area ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. to-3pf to-220fp ' * 6 $0y order code v ds r ds(on) max. i d p tot stf12n120k5 1200 v 0.69 ? 12 a 40 w STFW12N120K5 63 w table 1. device summary order code marking packages packing stf12n120k5 12n120k5 to-220fp tube STFW12N120K5 to-3pf www.st.com
contents stf12n120k5, STFW12N120K5 2/16 docid026396 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220fp, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-3pf, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid026396 rev 2 3/16 stf12n120k5, STFW12N120K5 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-3pf v gs gate-source voltage 30 v i d drain current at t c = 25 c 12 a i d drain current at t c = 100 c 7.6 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 40 63 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2500 3500 v i ar (2) 2. pulse width limited by t jmax. max current during repetitive or single pulse avalanche 4a e as (3) 3. starting t j = 25 c, i d =i as , v dd = 50 v single pulse avalanche energy 215 mj dv/dt (4) 4. i sd 12 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (5) 5. v ds 960 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220fp to-3pf r thj-case thermal resistance junction-case max 3.1 1.98 c/w r thj-amb thermal resistance junction-amb max 62.5 50 c/w
electrical characteristics stf12n120k5, STFW12N120K5 4/16 docid026396 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage, (v gs = 0) i d = 1 ma 1200 v i dss zero gate voltage drain current (v gs = 0) v ds = 1200 v 1 a v ds = 1200 v, tc=125 c 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.62 0.69 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -1370- pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance -0.6- pf c o(tr) (1) 1. time-related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, time-related v gs = 0, v ds = 0 to 960 v -128- pf c o(er) (2) 2. energy-related is defined as a c onstant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, energy-related -42-pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 3.5 - ? q g total gate charge v dd = 960 v, i d = 6 a v gs =10 v (see figure 18 ) - 44.2 - nc q gs gate-source charge - 7.3 - nc q gd gate-drain charge - 30 - nc
docid026396 rev 2 5/16 stf12n120k5, STFW12N120K5 electrical characteristics 16 the built-in back-to-back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. these integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 600 v, i d = 6 a, r g =4.7 ? , v gs =10 v (see figure 20 ) -23-ns t r rise time - 11 - ns t d(off) turn-off delay time - 68.5 - ns t f fall time - 18.5 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 12 a i sdm source-drain current (pulsed) - 48 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/s, (see figure 19 ) - 630 ns q rr reverse recovery charge - 12.6 c i rrm reverse recovery current - 40 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 19 ) - 892 ns q rr reverse recovery charge - 15.6 c i rrm reverse recovery current - 35 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - v
electrical characteristics stf12n120k5, STFW12N120K5 6/16 docid026396 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ figure 4. safe operating area for to-3pf figure 5. thermal impedance for to-3pf , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ w s v . 6lqjohsxovh =wkb723) figure 6. output characteristics figure 7. transfer characteristics , ' 9 '6 9 $ 9 9 9 *6 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$
docid026396 rev 2 7/16 stf12n120k5, STFW12N120K5 electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 *,3*6$ *,3'07 5 '6rq , ' $ 9 *6 9 & 9 '6 9 s) &lhv &rhv &uhv *,3'07 ( rvv 9 '6 9 ?- *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 7 - ?& 5 '6rq qrup 9 *6 9 *,3*6$
electrical characteristics stf12n120k5, STFW12N120K5 8/16 docid026396 rev 2 figure 14. normalized v (br)dss vs temperature figure 15. source-drain diode forward characteristics 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$ figure 16. maximum avalanche energy vs starting t j ( $6 7 - ?& p- , ' $ 9 '' 9 *,3*6$
docid026396 rev 2 9/16 stf12n120k5, STFW12N120K5 test circuits 16 3 test circuits figure 17. switching time test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform $0y 9 *6 3 : 9 ' 5 * 5 / '87 ) ) 9 '' $0y 9 '' n n n n n 9 9 l 9 9 *0$; ) 3 : , * &2167 q) '87 9 * $0y $ ' '87 6 % * $ $ % % 5 * * )$67 ',2'( ' 6 / + ) ) 9 '' $0y 9 l 3 z 9 ' , ' '87 / ) ) 9 '' $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' $0y 9 '6 w rq wg rq wg rii w rii w i w u 9 *6
package information stf12n120k5, STFW12N120K5 10/16 docid026396 rev 2 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026396 rev 2 11/16 stf12n120k5, STFW12N120K5 package information 16 4.1 to-220fp, package information figure 23. to-220fp package outline b5hyb.b%
package information stf12n120k5, STFW12N120K5 12/16 docid026396 rev 2 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
docid026396 rev 2 13/16 stf12n120k5, STFW12N120K5 package information 16 4.2 to-3pf, package outline figure 24. to-3pf package outline b'
package information stf12n120k5, STFW12N120K5 14/16 docid026396 rev 2 table 10. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 ? 3.40 3.80
docid026396 rev 2 15/16 stf12n120k5, STFW12N120K5 revision history 16 5 revision history table 11. document revision history date revision changes 22-may-2014 1 first release. part number (STFW12N120K5) previously included in datasheet docid022133 11-may-2015 2 updated title, features and description. updated table 4.: on/off states and table 5.: dynamic . updated figure 9.: static drain-source on-resistance and figure 10.: capacitance variations minor text changes.
stf12n120k5, STFW12N120K5 16/16 docid026396 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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